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ARCHIVE INFORMATION
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RF Device Data
Freescale Semiconductor
MRF19125R3
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS
= 0 Vdc, I
D
= 100
μAdc)
V(BR)DSS
65
?
?
Vdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 26 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
On Characteristics
Forward Transconductance
(VDS
= 10 Vdc, I
D
= 3 Adc)
gfs
?
9
?
S
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 300
μAdc)
VGS(th)
2
?
4
Vdc
Gate Quiescent Voltage
(VDS
= 26 Vdc, I
D
= 1300 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 3 Adc)
VDS(on)
?
0.185
0.21
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
Crss
?
5.4
?
pF
Functional Tests
(In Freescale Test Fixture) 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB
@ 0.01% Probability on CCDF.
Common-Source Amplifier Power Gain
(VDD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz)
Gps
12
13.5
?
dB
Drain Efficiency
(VDD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz)
η
19
22
?
%
Intermodulation Distortion
(VDD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz; IM3 measured over 1.2288 MHz Bandwidth at
f1 -2.5 MHz and f2 +2.5 MHz)
IM3
?
-37
-35
dBc
Adjacent Channel Power Ratio
(VDD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz; ACPR measured over 30 kHz Bandwidth at
f1 -885 MHz and f2 +885 MHz)
ACPR
?
-51
-47
dBc
Input Return Loss
(VDD
= 26 Vdc, P
out
= 24 W Avg, I
DQ
= 1300 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz)
IRL
?
-13
-9
dB
1. Part is internally matched both on input and output.
(continued)
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